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SUD50N03-16P
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TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
Transconductance
60
T C = ? 55 _ C
50
25 _ C
40
125 _ C
30
0.05
0.04
0.03
Vishay Siliconix
On-Resistance vs. Drain Current
V GS = 4.5 V
20
10
0
0.02
0.01
0.00
V GS = 10 V
0
5
10
15
20
25
30
0
10
20
30
40
50
60
I D ? Drain Current (A)
I D ? Drain Current (A)
1500
1200
900
600
300
Capacitance
C iss
C oss
10
8
6
4
2
V DS = 15 V
I D = 50 A
Gate Charge
C rss
0
0
0
5
10
15
20
25
30
0
3
6
9
12
15
18
V DS ? Drain-to-Source Voltage (V)
Q g ? Total Gate Charge (nC)
2.1
1.8
1.5
On-Resistance vs. Junction Temperature
V GS = 10 V
I D = 15 A
100
Source-Drain Diode Forward Voltage
T J = 150 _ C
T J = 25 _ C
10
1.2
0.9
0.6
? 50
? 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
T J ? Junction Temperature ( _ C)
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
V SD ? Source-to-Drain Voltage (V)
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